RF MOSFET Transistors Power Amplifier
Products specifications
Rds On - Drain-Source Resistance | 300 mOhms |
Maximum Operating Temperature | + 225 C |
Output Power | 280 W |
Packaging | Reel |
Gain | 15.5 dB |
Technology | Si |
Product Type | RF MOSFET Transistors |
Transistor Polarity | Dual N-Channel |
Vds - Drain-Source Breakdown Voltage | 105 V |