RF MOSFET Transistors RF LDMOS FET
Products specifications
Rds On - Drain-Source Resistance | 2 Ohms |
Maximum Operating Temperature | + 225 C |
Packaging | Reel |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 65 V |
Product Type | RF MOSFET Transistors |
Output Power | 5 W |
Gain | 21 dB |
Transistor Polarity | N-Channel |