RF MOSFET Transistors RF LDMOS FET
Products specifications
Product Type | RF MOSFET Transistors |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 65 V |
Output Power | 200 W |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 225 C |
Gain | 19.5 dB |
Rds On - Drain-Source Resistance | 50 mOhms |
Packaging | Reel |