RF MOSFET Transistors RF LDMOS FET
Products specifications
Technology | Si |
Maximum Operating Temperature | + 225 C |
Transistor Polarity | Dual N-Channel |
Output Power | 25 W |
Rds On - Drain-Source Resistance | 50 mOhms |
Vds - Drain-Source Breakdown Voltage | 65 V |
Packaging | Reel |
Product Type | RF MOSFET Transistors |
Gain | 20 dB |