RF MOSFET Transistors RF LDMOS FET
Products specifications
Technology | Si |
Gain | 21 dB |
Output Power | 28 W |
Product Type | RF MOSFET Transistors |
Vds - Drain-Source Breakdown Voltage | 65 V |
Packaging | Reel |
Rds On - Drain-Source Resistance | 50 mOhms |
Transistor Polarity | Dual N-Channel |
Maximum Operating Temperature | + 225 C |