PTFB213004F-V2-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Gain	18 dB
Transistor Polarity	Dual N-Channel
Output Power	300 W
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	30 mOhms
Packaging	Reel

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Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Gain	18 dB
Transistor Polarity	Dual N-Channel
Output Power	300 W
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	30 mOhms
Packaging	Reel