PTFB212503FL-V2-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Rds On - Drain-Source Resistance	50 mOhms
Technology	Si
Gain	18 dB
Maximum Operating Temperature	+ 200 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Output Power	240 W

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Products specifications

Rds On - Drain-Source Resistance	50 mOhms
Technology	Si
Gain	18 dB
Maximum Operating Temperature	+ 200 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Output Power	240 W