PTFB211503FL-V2-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Gain	18 dB
Rds On - Drain-Source Resistance	80 mOhms
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Output Power	150 W
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Gain	18 dB
Rds On - Drain-Source Resistance	80 mOhms
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Output Power	150 W
Transistor Polarity	N-Channel