PTFB210801FA-V1-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	80 W
Transistor Polarity	N-Channel
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Gain	18.5 dB
Packaging	Reel
Maximum Operating Temperature	+ 200 C
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms

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Products specifications

Output Power	80 W
Transistor Polarity	N-Channel
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Gain	18.5 dB
Packaging	Reel
Maximum Operating Temperature	+ 200 C
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms