PTFB210801FA-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Product Type	RF MOSFET Transistors
Gain	18.5 dB
Transistor Polarity	N-Channel
Output Power	80 W
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 200 C
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms

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Products specifications

Product Type	RF MOSFET Transistors
Gain	18.5 dB
Transistor Polarity	N-Channel
Output Power	80 W
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 200 C
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms