RF MOSFET Transistors RF LDMOS FET
Products specifications
Output Power | 140 W |
Packaging | Reel |
Transistor Polarity | N-Channel |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 65 V |
Product Type | RF MOSFET Transistors |
Maximum Operating Temperature | + 225 C |
Gain | 16 dB |
Rds On - Drain-Source Resistance | 300 mOhms |