PTFB193404F-V1-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Rds On - Drain-Source Resistance	50 mOhms
Packaging	Reel
Technology	Si
Maximum Operating Temperature	+ 225 C
Gain	19 dB
Output Power	340 W
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors

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Products specifications

Rds On - Drain-Source Resistance	50 mOhms
Packaging	Reel
Technology	Si
Maximum Operating Temperature	+ 225 C
Gain	19 dB
Output Power	340 W
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors