PTFB192503FL-V2-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	30 mOhms
Gain	19 dB
Technology	Si
Output Power	240 W
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel

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Products specifications

Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	30 mOhms
Gain	19 dB
Technology	Si
Output Power	240 W
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel