PTFB183404F-V2-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	340 W
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Gain	17 dB
Vds - Drain-Source Breakdown Voltage	65 V

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Products specifications

Output Power	340 W
Packaging	Reel
Maximum Operating Temperature	+ 225 C
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Gain	17 dB
Vds - Drain-Source Breakdown Voltage	65 V