PTFB183404F-V2-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	Dual N-Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Output Power	340 W
Gain	17 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V

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Products specifications

Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	Dual N-Channel
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Output Power	340 W
Gain	17 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V