PTFB183404E-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Gain	17 dB
Output Power	340 W
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Packaging	Reel
Rds On - Drain-Source Resistance	50 mOhms
Technology	Si
Maximum Operating Temperature	+ 225 C

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Products specifications

Gain	17 dB
Output Power	340 W
Vds - Drain-Source Breakdown Voltage	65 V
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel
Packaging	Reel
Rds On - Drain-Source Resistance	50 mOhms
Technology	Si
Maximum Operating Temperature	+ 225 C