PTFB182503FL-V2-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	240 W
Gain	19 dB
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	30 mOhms
Maximum Operating Temperature	+ 200 C
Packaging	Reel
Technology	Si
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V

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Products specifications

Output Power	240 W
Gain	19 dB
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	30 mOhms
Maximum Operating Temperature	+ 200 C
Packaging	Reel
Technology	Si
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V