PTFB093608FV-V3-R2

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Gain	19 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 225 C
Output Power	360 W

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Products specifications

Gain	19 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 225 C
Output Power	360 W