PTFB093608FV-V3-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Technology	Si
Rds On - Drain-Source Resistance	50 mOhms
Gain	19 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Output Power	360 W
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel

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Products specifications

Technology	Si
Rds On - Drain-Source Resistance	50 mOhms
Gain	19 dB
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Output Power	360 W
Maximum Operating Temperature	+ 225 C
Product Type	RF MOSFET Transistors
Transistor Polarity	Dual N-Channel