PTFB092707FH-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Maximum Operating Temperature	+ 225 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	N-Channel
Output Power	270 W
Product Type	RF MOSFET Transistors
Gain	19 dB
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms

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Products specifications

Maximum Operating Temperature	+ 225 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	N-Channel
Output Power	270 W
Product Type	RF MOSFET Transistors
Gain	19 dB
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms