PTFB091802FC-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Product Type	RF MOSFET Transistors
Output Power	180 W
Rds On - Drain-Source Resistance	150 mOhms
Technology	Si
Packaging	Reel
Gain	19.5 dB
Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 225 C
Transistor Polarity	Dual N-Channel

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Products specifications

Product Type	RF MOSFET Transistors
Output Power	180 W
Rds On - Drain-Source Resistance	150 mOhms
Technology	Si
Packaging	Reel
Gain	19.5 dB
Vds - Drain-Source Breakdown Voltage	65 V
Maximum Operating Temperature	+ 225 C
Transistor Polarity	Dual N-Channel