PTFB091507FH-V1-R250

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Output Power	160 W
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	50 mOhms
Maximum Operating Temperature	+ 225 C
Gain	20 dB
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	N-Channel

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Products specifications

Output Power	160 W
Technology	Si
Product Type	RF MOSFET Transistors
Rds On - Drain-Source Resistance	50 mOhms
Maximum Operating Temperature	+ 225 C
Gain	20 dB
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	65 V
Transistor Polarity	N-Channel