PTFB091507FH-V1-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 225 C
Output Power	160 W
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Gain	20 dB
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	50 mOhms

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Products specifications

Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 225 C
Output Power	160 W
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Gain	20 dB
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	50 mOhms