PTFB090901EA-V2-R0

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RF MOSFET Transistors RF LDMOS FET

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RF MOSFET Transistors RF LDMOS FET

Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	123 mOhms
Output Power	90 W
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Gain	19.5 dB
Product Type	RF MOSFET Transistors

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Products specifications

Technology	Si
Maximum Operating Temperature	+ 225 C
Rds On - Drain-Source Resistance	123 mOhms
Output Power	90 W
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Packaging	Reel
Gain	19.5 dB
Product Type	RF MOSFET Transistors