PTFB072707FH-V1-R0

Call for pricing

RF MOSFET Transistors RF LDMOS FET

Availability: Out of stock

Qty:

Free shipping

RF MOSFET Transistors RF LDMOS FET

Products specifications

Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 225 C
Gain	18.5 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	270 W
Packaging	Reel
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms

Your name *

Your email *

Enquiry *

Products specifications

Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 225 C
Gain	18.5 dB
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Output Power	270 W
Packaging	Reel
Technology	Si
Rds On - Drain-Source Resistance	50 mOhms