RF MOSFET Transistors RF LDMOS FET
Products specifications
Vds - Drain-Source Breakdown Voltage | 65 V |
Technology | Si |
Gain | 15.5 dB |
Transistor Polarity | Dual N-Channel |
Output Power | 30 W |
Product Type | RF MOSFET Transistors |
Rds On - Drain-Source Resistance | 800 mOhms |
Maximum Operating Temperature | + 225 C |
Packaging | Reel |