RF MOSFET Transistors RF LDMOS FET
Products specifications
Gain | 14.3 dB |
Maximum Operating Temperature | + 225 C |
Packaging | Reel |
Rds On - Drain-Source Resistance | 400 mOhms |
Output Power | 50 W |
Transistor Polarity | Dual N-Channel |
Technology | Si |
Product Type | RF MOSFET Transistors |
Vds - Drain-Source Breakdown Voltage | 65 V |