GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt
Products specifications
Gain | 12.4 dB |
Transistor Type | HEMT |
Id - Continuous Drain Current | 12 A |
Vds - Drain-Source Breakdown Voltage | 100 V |
Output Power | 131 W |
Technology | GaN |
Pd - Power Dissipation | - |
Maximum Drain Gate Voltage | - |
Packaging | Tray |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 40 C |
Mounting Style | Screw Mount |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Product Type | RF JFET Transistors |
Transistor Polarity | N-Channel |