GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Products specifications
Transistor Type | HEMT |
Id - Continuous Drain Current | 6 A |
Transistor Polarity | N-Channel |
Product Type | RF JFET Transistors |
Vgs - Gate-Source Breakdown Voltage | 3 V |
Mounting Style | Screw Mount |
Minimum Operating Temperature | - 40 C |
Vds - Drain-Source Breakdown Voltage | 100 V |
Output Power | 50 W |
Packaging | Tray |
Gain | 10 dB |
Maximum Drain Gate Voltage | - |
Technology | GaN |
Pd - Power Dissipation | - |
Maximum Operating Temperature | + 150 C |