CGHV60170D

GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt
Lead Time: 182 Days

SKU: CGHV60170D-GP4

Availability: 40 in stock

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Price

R 7,845.74

R 7,593.70

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GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt
Lead Time: 182 Days

Products specifications

Product Type	RF JFET Transistors
Transistor Type	HEMT
Transistor Polarity	N-Channel
Maximum Operating Temperature	-
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-
Output Power	170 W
Id - Continuous Drain Current	12.6 A
Technology	GaN
Vds - Drain-Source Breakdown Voltage	50 V
Maximum Drain Gate Voltage	-
Pd - Power Dissipation	-
Gain	18 dB
Minimum Operating Temperature	-

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Products specifications

Product Type	RF JFET Transistors
Transistor Type	HEMT
Transistor Polarity	N-Channel
Maximum Operating Temperature	-
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-
Output Power	170 W
Id - Continuous Drain Current	12.6 A
Technology	GaN
Vds - Drain-Source Breakdown Voltage	50 V
Maximum Drain Gate Voltage	-
Pd - Power Dissipation	-
Gain	18 dB
Minimum Operating Temperature	-