CGHV60075D5

RF Amplifier DIE, 75W, 6.0GHz, GaN HEMT, 510557, 10.4mm, G50V3-2

SKU: CGHV60075D5

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R 1,610.03

R 1,542.44

R 1,497.47

R 1,452.50

R 1,449.53

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RF Amplifier DIE, 75W, 6.0GHz, GaN HEMT, 510557, 10.4mm, G50V3-2

Products specifications

Packaging	Gel Pack
Id - Continuous Drain Current	10 A
Maximum Drain Gate Voltage	-
Output Power	75 W
Maximum Operating Temperature	-
Vgs - Gate-Source Breakdown Voltage	150 V
Gain	17 dB
Pd - Power Dissipation	41.6 W
Transistor Type	HEMT
Minimum Operating Temperature	-
Technology	GaN
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	150 V

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Products specifications

Packaging	Gel Pack
Id - Continuous Drain Current	10 A
Maximum Drain Gate Voltage	-
Output Power	75 W
Maximum Operating Temperature	-
Vgs - Gate-Source Breakdown Voltage	150 V
Gain	17 dB
Pd - Power Dissipation	41.6 W
Transistor Type	HEMT
Minimum Operating Temperature	-
Technology	GaN
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	150 V