CGHV59350F

GaN FETs GaN HEMT 5.2-5.9GHz, 350 Watt

SKU: CGHV59350F-AMP

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GaN FETs GaN HEMT 5.2-5.9GHz, 350 Watt

Products specifications

Minimum Operating Temperature	- 40 C
Gain	11 dB
Vds - Drain-Source Breakdown Voltage	125 V
Technology	GaN
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Output Power	450 W
Packaging	Tray
Transistor Type	HEMT
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C

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Products specifications

Minimum Operating Temperature	- 40 C
Gain	11 dB
Vds - Drain-Source Breakdown Voltage	125 V
Technology	GaN
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Output Power	450 W
Packaging	Tray
Transistor Type	HEMT
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C