CGHV50200F

GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt

SKU: CGHV50200F-AMP

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Quantity

30+

Price

R 36,668.93

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GaN FETs GaN HEMT 4.4-5.0GHz, 200 Watt

Products specifications

Transistor Type	HEMT
Packaging	Tray
Gain	11.5 dB
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Vds - Drain-Source Breakdown Voltage	150 V
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	-
Output Power	180 W
Mounting Style	Screw Mount
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Technology	GaN
Id - Continuous Drain Current	17 A
Pd - Power Dissipation	-

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Products specifications

Transistor Type	HEMT
Packaging	Tray
Gain	11.5 dB
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Vds - Drain-Source Breakdown Voltage	150 V
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	-
Output Power	180 W
Mounting Style	Screw Mount
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Technology	GaN
Id - Continuous Drain Current	17 A
Pd - Power Dissipation	-