GaN FETs GaN HEMT DC-2.5GHz, 180 Watt
Products specifications
Output Power | 250 W |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 40 C |
Maximum Drain Gate Voltage | - |
Gain | 16.1 dB |
Technology | GaN |
Vds - Drain-Source Breakdown Voltage | 150 V |
Packaging | Tray |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Pd - Power Dissipation | 166 W |
Transistor Polarity | N-Channel |
Product Type | RF JFET Transistors |
Mounting Style | Screw Mount |
Id - Continuous Drain Current | 8.7 A |
Transistor Type | HEMT |