GaN FETs GaN HEMT
Lead Time: 21 Days
Products specifications
Output Power | 180 W |
Product Type | RF JFET Transistors |
Technology | GaN |
Id - Continuous Drain Current | 18 A |
Packaging | Tray |
Minimum Operating Temperature | - 40 C |
Mounting Style | Screw Mount |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Transistor Polarity | N-Channel |
Gain | 20.3 dB |
Pd - Power Dissipation | 150 W |
Maximum Operating Temperature | + 150 C |
Transistor Type | HEMT |
Maximum Drain Gate Voltage | - |
Vds - Drain-Source Breakdown Voltage | 125 V |