CGHV40100F

GaN FETs GaN HEMT DC-4.0GHz, 100 Watt
Lead Time: 182 Days

SKU: CGHV40100F

Availability: 240 in stock

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GaN FETs GaN HEMT DC-4.0GHz, 100 Watt
Lead Time: 182 Days

Products specifications

Mounting Style	Screw Mount
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Gain	11 dB
Pd - Power Dissipation	-
Packaging	Tube
Technology	GaN
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	150 V
Maximum Drain Gate Voltage	-
Transistor Type	HEMT
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	2.7 V
Output Power	100 W
Id - Continuous Drain Current	8.7 A

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Products specifications

Mounting Style	Screw Mount
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Gain	11 dB
Pd - Power Dissipation	-
Packaging	Tube
Technology	GaN
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	150 V
Maximum Drain Gate Voltage	-
Transistor Type	HEMT
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	2.7 V
Output Power	100 W
Id - Continuous Drain Current	8.7 A