CGHV35150F

GaN FETs GaN HEMT 2.9-3.5GHz, 150 Watt
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SKU: CGHV35150F-AMP

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GaN FETs GaN HEMT 2.9-3.5GHz, 150 Watt
Lead Time: 0 Days

Products specifications

Id - Continuous Drain Current	12 A
Technology	GaN
Product Type	RF JFET Transistors
Gain	13.3 dB
Pd - Power Dissipation	-
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Vds - Drain-Source Breakdown Voltage	150 V
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Mounting Style	Screw Mount
Maximum Drain Gate Voltage	-
Output Power	170 W
Transistor Polarity	N-Channel
Transistor Type	HEMT

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Products specifications

Id - Continuous Drain Current	12 A
Technology	GaN
Product Type	RF JFET Transistors
Gain	13.3 dB
Pd - Power Dissipation	-
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Vds - Drain-Source Breakdown Voltage	150 V
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Mounting Style	Screw Mount
Maximum Drain Gate Voltage	-
Output Power	170 W
Transistor Polarity	N-Channel
Transistor Type	HEMT