GaN FETs GaN HEMT 2.7-3.1GHz, 60 Watt
Products specifications
Minimum Operating Temperature | - 40 C |
Id - Continuous Drain Current | 10.4 A |
Maximum Drain Gate Voltage | 50 V |
Transistor Type | HEMT |
Pd - Power Dissipation | 52 W |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Gain | 14.5 dB |
Transistor Polarity | N-Channel |
Packaging | Reel |
Maximum Operating Temperature | + 107 C |
Product Type | RF JFET Transistors |
Output Power | 75 W |
Technology | GaN |
Vds - Drain-Source Breakdown Voltage | 150 V |