GaN FETs GaN HEMT DC-2.7GHz, 60 Watt
Products specifications
Packaging | Cut Tape, MouseReel, Reel |
Technology | GaN |
Gain | 18.5 dB |
Transistor Polarity | N-Channel |
Transistor Type | HEMT |
Product Type | RF JFET Transistors |
Output Power | 60 W |
Id - Continuous Drain Current | 6.3 A |
Maximum Drain Gate Voltage | - |
Maximum Operating Temperature | + 90 C |
Pd - Power Dissipation | - |
Vds - Drain-Source Breakdown Voltage | 150 V |
Minimum Operating Temperature | - 40 C |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |