CGHV27030S

GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 77 Days

SKU: CGHV27030S

Availability: 296 in stock

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GaN FETs GaN HEMT DC-6.0GHz, 30 Watt
Lead Time: 77 Days

Products specifications

Maximum Drain Gate Voltage	50 V
Technology	GaN
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	3.6 A
Packaging	Cut Tape, MouseReel, Reel
Output Power	30 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	12 W
Gain	21 dB
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Product Type	RF JFET Transistors
Transistor Type	HEMT

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Products specifications

Maximum Drain Gate Voltage	50 V
Technology	GaN
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	3.6 A
Packaging	Cut Tape, MouseReel, Reel
Output Power	30 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	12 W
Gain	21 dB
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V
Product Type	RF JFET Transistors
Transistor Type	HEMT