GaN FETs GaN HEMT DC-6.0GHz, 15 Watt
Lead Time: 49 Days
Products specifications
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 5 W |
Vds - Drain-Source Breakdown Voltage | 150 V |
Output Power | 15 W |
Packaging | Cut Tape, MouseReel, Reel |
Technology | GaN |
Transistor Polarity | N-Channel |
Gain | 21.2 dB |
Minimum Operating Temperature | - 40 C |
Maximum Drain Gate Voltage | 50 V |
Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
Id - Continuous Drain Current | 1.78 A |
Product Type | RF JFET Transistors |
Transistor Type | HEMT |