CGHV1J070D-GP4

GaN FETs GaN HEMT Die DC-18GHz, 70 Watt
Lead Time: 182 Days

SKU: CGHV1J070D-GP4

Availability: 90 in stock

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Quantity

10+

Price

R 11,797.96

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GaN FETs GaN HEMT Die DC-18GHz, 70 Watt
Lead Time: 182 Days

Products specifications

Gain	17 dB
Output Power	70 W
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Packaging	Gel Pack
Transistor Type	HEMT
Id - Continuous Drain Current	6 A
Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Technology	GaN SiC

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Products specifications

Gain	17 dB
Output Power	70 W
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Packaging	Gel Pack
Transistor Type	HEMT
Id - Continuous Drain Current	6 A
Maximum Operating Temperature	+ 225 C
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Technology	GaN SiC