CGHV1J025D-GP4

GaN FETs GaN HEMT Die DC-18GHz, 25 Watt
Lead Time: 182 Days

SKU: CGHV1J025D-GP4

Availability: 180 in stock

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R 5,244.23

R 5,083.74

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GaN FETs GaN HEMT Die DC-18GHz, 25 Watt
Lead Time: 182 Days

Products specifications

Minimum Operating Temperature	-
Transistor Type	HEMT
Product Type	RF JFET Transistors
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Output Power	25 W
Technology	GaN
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Maximum Operating Temperature	-
Packaging	Gel Pack
Id - Continuous Drain Current	2 A
Gain	17 dB
Maximum Drain Gate Voltage	-
Vds - Drain-Source Breakdown Voltage	100 V

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Products specifications

Minimum Operating Temperature	-
Transistor Type	HEMT
Product Type	RF JFET Transistors
Pd - Power Dissipation	-
Transistor Polarity	N-Channel
Output Power	25 W
Technology	GaN
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Maximum Operating Temperature	-
Packaging	Gel Pack
Id - Continuous Drain Current	2 A
Gain	17 dB
Maximum Drain Gate Voltage	-
Vds - Drain-Source Breakdown Voltage	100 V