CGHV1J006D-GP4

GaN FETs GaN HEMT Die DC-18GHz, 6 Watt
Lead Time: 182 Days

SKU: CGHV1J006D-GP4

Availability: 30 in stock

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Quantity

10+

Price

R 1,973.28

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GaN FETs GaN HEMT Die DC-18GHz, 6 Watt
Lead Time: 182 Days

Products specifications

Id - Continuous Drain Current	0.8 A
Vds - Drain-Source Breakdown Voltage	100 V
Product Type	RF JFET Transistors
Maximum Operating Temperature	-
Gain	17 dB
Minimum Operating Temperature	-
Technology	GaN
Maximum Drain Gate Voltage	-
Packaging	Gel Pack
Output Power	6 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Pd - Power Dissipation	-

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Products specifications

Id - Continuous Drain Current	0.8 A
Vds - Drain-Source Breakdown Voltage	100 V
Product Type	RF JFET Transistors
Maximum Operating Temperature	-
Gain	17 dB
Minimum Operating Temperature	-
Technology	GaN
Maximum Drain Gate Voltage	-
Packaging	Gel Pack
Output Power	6 W
Transistor Type	HEMT
Transistor Polarity	N-Channel
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Pd - Power Dissipation	-