GaN FETs GaN HEMT DC-15GHz, 25 Watt
Lead Time: 15 Days
Products specifications
Packaging | Cut Tape, Reel |
Maximum Drain Gate Voltage | - |
Id - Continuous Drain Current | 2 A |
Transistor Type | HEMT |
Gain | 11 dB |
Product Type | RF JFET Transistors |
Maximum Operating Temperature | + 150 C |
Technology | GaN SiC |
Vds - Drain-Source Breakdown Voltage | 100 V |
Output Power | 25 W |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | - |