CGHV1F006S

GaN FETs GaN HEMT DC-18GHz, 6 Watt
Lead Time: 100 Days

SKU: CGHV1F006S

Availability: 824 in stock

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GaN FETs GaN HEMT DC-18GHz, 6 Watt
Lead Time: 100 Days

Products specifications

Pd - Power Dissipation	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Transistor Type	HEMT
Maximum Operating Temperature	+ 150 C
Gain	16 dB
Packaging	Cut Tape, MouseReel, Reel
Maximum Drain Gate Voltage	-
Technology	GaN
Id - Continuous Drain Current	950 mA
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel
Output Power	6 W
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors

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Products specifications

Pd - Power Dissipation	-
Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Transistor Type	HEMT
Maximum Operating Temperature	+ 150 C
Gain	16 dB
Packaging	Cut Tape, MouseReel, Reel
Maximum Drain Gate Voltage	-
Technology	GaN
Id - Continuous Drain Current	950 mA
Vds - Drain-Source Breakdown Voltage	100 V
Transistor Polarity	N-Channel
Output Power	6 W
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors