GaN FETs GaN HEMT 1.2-1.4GHz, 800 Watt
Products specifications
Vds - Drain-Source Breakdown Voltage | 150 V |
Product Type | RF JFET Transistors |
Gain | 14 dB |
Mounting Style | Screw Mount |
Transistor Type | HEMT |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | - |
Transistor Polarity | N-Channel |
Technology | GaN |
Output Power | 800 W |
Id - Continuous Drain Current | 24 A |
Maximum Operating Temperature | + 100 C |
Packaging | Tray |
Maximum Drain Gate Voltage | - |