GaN FETs GaN HEMT 1.2-1.4GHz, 500 Watt
Products specifications
Maximum Operating Temperature | + 130 C |
Packaging | Tube |
Minimum Operating Temperature | - 40 C |
Gain | 17.1 dB |
Product Type | RF JFET Transistors |
Transistor Polarity | N-Channel |
Output Power | 510 W |
Maximum Drain Gate Voltage | - |
Technology | GaN |
Transistor Type | HEMT |
Vds - Drain-Source Breakdown Voltage | 150 V |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Pd - Power Dissipation | - |
Id - Continuous Drain Current | 36 A |
Mounting Style | Screw Mount |