GaN FETs GaN HEMT 1.2-1.4GHz, 250 Watt
Products specifications
Packaging | Tube |
Pd - Power Dissipation | - |
Gain | 18.6 dB |
Id - Continuous Drain Current | 18 A |
Maximum Drain Gate Voltage | - |
Product Type | RF JFET Transistors |
Vds - Drain-Source Breakdown Voltage | 150 V |
Output Power | 330 W |
Transistor Type | HEMT |
Mounting Style | Screw Mount |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 40 C |
Technology | GaN |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Maximum Operating Temperature | + 130 C |