GaN FETs GaN HEMT Die DC-6.0GHz, 120 Watt
Lead Time: 182 Days
Products specifications
Output Power | 120 W |
Maximum Drain Gate Voltage | - |
Gain | 13 dB |
Vds - Drain-Source Breakdown Voltage | 120 V |
Id - Continuous Drain Current | 12 A |
Minimum Operating Temperature | - |
Packaging | Waffle |
Product Type | RF JFET Transistors |
Technology | GaN |
Pd - Power Dissipation | - |
Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Transistor Type | HEMT |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | - |